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Plant Physiol, November 2001, Vol. 127, pp. 918-927
Different Mechanisms of Four Aluminum (Al)-Resistant Transgenes
for Al Toxicity in Arabidopsis1
Bunichi
Ezaki,*
Maki
Katsuhara,
Masako
Kawamura, and
Hideaki
Matsumoto
Research Institute For Bioresources, Okayama University, 2-20-1,
Chuou, Kurashiki, Okayama 710-0046, Japan
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ABSTRACT |
We have characterized the mechanism of action of four
transgenes (AtBCB [Arabidopsis blue copper-binding
protein], parB [tobacco {Nicotiana
tabacum} glutathione S-transferase],
NtPox [tobacco peroxidase], and NtGDI1
[tobacco GDP dissociation inhibitor]) that independently Al
resistance on transgenic Arabidopsis. All four transgenic lines showed
lower deposition of callose after Al treatment than the
Landsberg erecta ecotype of Arabidopsis, confirming that the four genes function to ameliorate Al toxicity. Influx and efflux experiments of Al ions suggested that the
AtBCB gene may suppress Al absorption, whereas
expression of the NtGDI1 gene promotes a release of Al
in the root tip region of Arabidopsis. The total enzyme activities of
glutathione S-transferases or peroxidases in transgenic
lines carrying either the parB or NtPox
genes were significantly higher than in the Landsberg
erecta ecotype of Arabidopsis, and these enzyme
activities were maintained at higher levels during Al stress.
Furthermore, lipid peroxidation caused by Al stress was repressed in
these two transgenic lines, suggesting that overexpression of these two
genes diminishes oxidative damage caused by Al stress. Al-treated roots
of transgenic plants were also stained by 4',6-diamino-2-phenylindole to monitor cell death caused by Al toxicity. The result suggested that
cell death is repressed in the NtPox line. Analysis of
F1 hybrids between the four transgenic lines suggests that
more resistant transgenic plants can be constructed by combinations of
these four genes.
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INTRODUCTION |
Al is a major mineral constituent of
soil and dissolves into soil solution as various ionic forms under low
pH conditions. It is well known that these ions have toxic effects on
root growth in plants (Kochian, 1995 ; Matsumoto, 2000 ). Many strategies
for Al tolerance have been reported. Exudation of Al-chelating organic acids, such as malate, oxalate, or citrate, into the rhizosphere has
been proposed as the most effective tolerance mechanism to avoid Al
toxicity in many plants (Ryan et al., 1995 ). Overexpression of a
bacterial citrate synthase gene in transgenic plants was reported to
confer Al tolerance (de la Fuente et al., 1997 ), although this result
was not able to be reproduced (Delhaize et al., 2001 ). Degenhardt et
al. (1998) reported that the Al resistance in the Arabidopsis mutant
(alr-104) is caused by an Al-induced increase in rhizosphere
pH. A range of alternative tolerance mechanisms has also been proposed
(Kochian, 1995 ), but it is not yet known how many genes contribute to
Al resistance in tolerant plants.
Molecular genetic study has the potential to dissect Al resistance
mechanisms. Over 20 genes induced by Al stress have been isolated from
a range of plant species, including wheat (Triticum aestivum; Snowden and Gardner, 1993 ; Snowden et al., 1995 ;
Cruz-Ortega et al., 1997 ; Hamel et al., 1998 ; Delhaize et al.,
1999 ), tobacco (Nicotiana tabacum; Ezaki et al., 1995 ,
1996 ), and Arabidopsis (Sugimoto and Sakamoto, 1997 ; Richards et al.,
1998 ). Most of these Al-induced genes are general stress-inducible
genes, whose expression is turned on by oxidative stress, pathogen
infection, phosphate starvation, heat shock, other metal stresses, and
hormone treatments. It is therefore suggested that common gene
induction mechanisms exist among these different stresses. However, the biological roles of Al-induced genes in Al stress and the induction mechanisms of these genes by Al stress are still unclear. We recently expressed plant Al-induced genes in both yeast (Saccharomyces cerevisiae) cells and Arabidopsis. The two genes, the Arabidopsis blue copper-binding protein gene (AtBCB) and a tobacco
GDP dissociation inhibitor gene (NtGDI1), conferred
Al resistance in yeast (Ezaki et al., 1999 ). These two genes and two
others, a tobacco glutathione S-transferase (GST) gene
(parB) and a tobacco peroxidase gene (NtPox),
also ameliorated Al toxicity in Arabidopsis over a narrow range of Al
concentrations (Ezaki et al., 2000 ). These four genes have different
biochemical functions, suggesting that there are several different Al
tolerance mechanisms in plants. Characterization of these genes in
terms of their Al resistance mechanisms may be able to supply new
strategies for Al resistance in plants in addition to the release of
organic acids.
In this study, we investigate the resistance mechanisms of transgenic
Arabidopsis lines expressing these four Al-induced genes. Furthermore,
we show the feasibility of creating more resistant transgenic plants by
combining pairs of the genes in F1 plants.
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RESULTS |
Determination of Callose Content in Al-Treated Roots
Callose deposition in plasma membranes and plasmodesmata is widely
used as an indicator of Al toxicity in plants because callose accumulates in root tips after exposure to toxic levels of Al (Wissemeir et al., 1987 ; Zhang et al., 1994 ; Larsen et al.,
1996 ; Sivaguru et al., 2000 ). Figure 1
shows callose deposition in root tip regions of seven transgenic
Arabidopsis lines compared with the control Landsberg erecta
(Ler) ecotype of Arabidopsis. Untreated Ler root tips showed a
negligible level of fluorescence, whereas strong callose-specific
fluorescence signals could be detected in whole root tip region after
exposure to 100 µM Al for 6 h. Compared
with Al-treated control plants, callose accumulation in the root tip
region was slightly lower in the parB or NtGDI1 lines and much lower in the NtPox or AtBCB lines.
The transgenic plants carrying the wali5 or parA
genes, which are not Al resistant (Ezaki et al., 2000 ), showed a
similar strength of fluorescence signals to the control line. These
results are consistent with our previous results showing that Al
toxicity is diminished in these four transgenic plants compared with
the control. An exception to the pattern was noted for the
AtPox transgenic line, which did not show significant Al
resistance (Ezaki et al., 2000 ). It showed a lower callose staining in
the root tip region. Therefore, this line may be an exception to
previous results that suggested callose content in Al-treated roots is
a good indicator for Al toxicity (Larsen et al., 1996 ).

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Figure 1.
Microscopic observation of callose deposition in
the Al-treated root tip region of Ler and the transgenic lines. All
samples were visualized by staining with aniline blue. , Without Al
for 6 h; +, with 100 µM Al for 6 h.
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Al Contents in the Root Tip Region of the AtBCB or
NtGDI1 Lines
We previously examined Al content of root tip regions of the
transgenic plants using morin staining (Ezaki et al., 2000 ). To monitor
the Al content in the root region of the resistant lines more
precisely, an atomic absorption spectrophotometer was used in three
preliminary experiments: (a) detection of Al content in 5-mm root tip
segments after 100 µM Al treatment for 12 h, (b)
detection of Al content in 5-mm segments after 50 µM Al
treatment, and (c) detection of Al content in 2-mm segments after 50 µM Al treatment. There was no difference in Al content
between the transgenic lines and control under conditions a and b (Fig.
2, A and B), whereas small differences
could be seen between the tested lines when 2-mm root tip segments were
used (Fig. 2C; condition c). These results are consistent with our
previous morin staining, which showed a clear difference between the
resistant plants and Ler in the root tip region (0-0.5 mm) but minimal
difference in the upper region (>1-mm region). Because the difference
in Al content between the resistant lines and the control was only seen in the root apex, treatment condition c was used to characterize the
functions of the AtBCB and NtPox genes in Al
toxicity.

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Figure 2.
Al content in the root tip regions of the
resistant lines and a control line after Al treatments. A, Al content
in a 5-mm-long region of root tip after 100 µM Al
treatment for 12 h; B, Al content in a 5-mm-long region of root
tip after 50 µM Al treatment for 12 h; C, Al content
in a 2-mm-long region of root tip after 50 µM Al
treatment for 12 h. Al content in each of the 10 plants is shown.
Error bars are calculated from three independent experiments.
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Our previous influx and efflux experiments of yeast transformants
overexpressing the AtBCB or NtGDI1 genes
suggested that the former gene can function in suppression of Al uptake
and the latter provides an increase in Al efflux (Ezaki et al., 1999 ). We therefore measured Al content in the root tips region (0-2-mm length) of transgenic Arabidopsis carrying either of these two genes
during the Al uptake period and the recovery period. The AtBCB transgenic plant showed slightly lower Al uptake than
Ler, whereas Al influx of the NtGDI1 is similar to that of
Ler as seen in Figure 2C (Fig. 3A). The
other two resistant lines, expressing the parB and
NtPox genes, also showed a similar Al influx to Ler in their
uptake periods (data not shown). Al uptake in all tested plants was
linear for the first 24 h, suggesting that there was no saturation
in our Al influx experiment (data not shown). The decrease rate of Al
in the AtBCB line was very similar to that in Ler in the
recovery period, whereas the NtGDI1 line clearly showed a
faster decrease of Al than the two other lines tested (Fig. 3B).
Because the AtBCB line showed a slightly lower Al uptake as
described above, the Al content in this line was always lower than that
in Ler (approximately 15%-20% lower content in both uptake and
recovery period). In contrast, the reduction of Al content in the
NtGDI1 line was only seen in the Al release period.

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Figure 3.
Al content in the root tip region of the
AtBCB and NtGDI1 lines. Seven-day-old seedlings
of each line were used for the Al uptake experiment (100 µM Al treatment for 12 h as Al uptake
period, A) and recovery experiment (100 µM Al
treatment for 12 h and continuous growth for another 12 h
without Al condition as Al release period, B). Error bars are
calculated from three independent experiments.
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Enzyme Activities of GST and Peroxidase Are Increased in Transgenic
Lines
Two of the Al-resistant genes, parB and
NtPox, encode antioxidation enzymes, a GST and a moderate
anionic peroxidase, respectively. To confirm that the transgene-encoded
enzymes were being expressed, total activities of peroxidases and GSTs
were determined in the soluble fractions of whole roots of
parB or NtPox lines (Table I). Compared with control plants
(Ler), approximately 1.4 times higher total peroxidase or total GST
activities were detected in these lines because of a constitutive
overexpressing of either of these genes. Reduction of enzyme activity
by Al treatment was seen in all of tested lines, but much higher enzyme
activities (approximately 2.0 times and 1.7 times higher activity in
parB and in NtPox lines than in Ler,
respectively) were retained in these lines than in control after 100 µM Al treatment for 6 h. These results
indicate that overexpression of the two genes in transgenic lines
contributes to a maintenance of the total enzyme activity under the Al
treatment.
Content of Lipid Peroxides in Root Region of the Transgenic
Lines
Staining of Al-treated roots with 2',7'-dichloro
fluorescein diacetate (H2DCFDA) had
suggested that Al treatment causes oxidative damage and that there is a
reduction of oxidative stress in the root tips of the four Al-resistant
transgenic plants, especially in the NtPox lines (Ezaki et
al., 2000 ). To confirm these results, peroxidation of phospholipids in
the whole root region of the four transgenic plants and Ler was
determined by measuring malon dialdehyde (MDA), which is the final
product of lipid peroxidation (Fig. 4).
There was no significant difference in the basal levels of MDA produced
by untreated roots of the five tested lines. An increase of MDA could
be seen in all tested lines after an exposure to 100 µM Al treatment for 6 h. However, the
degree of induction varied between lines: 1.7 times in Ler, 1.6 times
in the AtBCB line, 1.2 times in the parB and the
NtGDI1 lines, and 1.1 times in the NtPox line.
The two lines expressing parB and NtPox showed much lower inductions than Ler, consistent with their overexpression of
antioxidation enzymes.

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Figure 4.
Determination of lipid peroxidation caused by Al
treatment in whole root region of Ler, AtBCB,
parB, NtPox, or NtGDI1 lines. The
content of lipid peroxides was estimated as MDA. Black and white bars
represent with 100 µM Al treatment or without
Al treatment for 6 h, respectively.
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The NtPox Transgenic Line Can Avoid Cell Death at High
Levels of Al Toxicity
It is known that salt stress (Katsuhara, 1997 ) and Al stress
(Yamaguchi et al., 1999 ) cause a degradation of DNA molecules and an
apoptosis-like cell death. To investigate whether Al treatment can
cause damage in nuclei leading to cell death in our four Al-resistant lines, these four lines and Ler were exposed to Al stress and stained
with 4',6-diamino-2-phenylindole (DAPI). Without Al treatment, most of
the nuclei showed normal alignment and were round in shape with smooth
boundaries in roots (Fig. 5, A-C for
control line; transgenic lines showed the same patterns, data not
shown). There was no change under 25 µM Al treatment, but
deformed nuclei could be observed after 50 µM Al
treatment for 24 h, and some degradation of nucleus was clearly
detected by 100 µM Al treatment for 24 h (Fig. 5, D
and E). A number of small DAPI-specific fluorescence particles also
could be seen in 100 µM Al-treated roots (Fig. 5F),
suggesting that some decomposition of nuclei had occurred. Al
concentrations higher than 100 µM (150 and 200 µM) were applied to the control roots, but there was no
clear difference in DNA damage between the three concentrations (data
not shown).

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Figure 5.
Microscopic observation of cell death
caused by Al stress. A through F, Ler; G, AtBCB line; H,
parB line; I, NtGDI1 line; J and K,
NtPox line. Ler roots were treated for 24 h with
various concentration of Al: 0 µM (A-C), 50 µM (D), and 100 µM (E
and F). Transgenic lines were also treated with 100 µM Al for 24 h (G-K). A, Simultaneous
light and fluorescent image; C, F, and K, magnified pictures of
Al-treated root of Ler and the NtPox line.
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The four transgenic lines were also exposed to 50 and 100 µM Al for 24 h. At 50 µM Al, there was
no difference between the lines or compared with untreated control Ler
plants (data not shown). At 100 µM Al, lines expressing
the AtBCB, parB, and NtGDI1 genes
showed nuclei damage (Fig. 5, G-I). In contrast, whereas some of the
roots showed levels of damage similar to that of controls, approximately 60% to 70% of the roots derived from the
NtPox line showed a lower damage after treatment with 100 µM Al (Fig. 5J). Compared with 100 µM Al-treated root tips of Ler, their nuclei were kept round in shape, and a much lower number of DAPI-specific particles could be observed (Fig. 5K).
To clarify whether the Al-treated roots still had the capability to
elongate their roots, the four transgenic lines and Ler were treated
with 100 µM Al for 24 h, then cultured for a further 7 to 12 d without Al, and their root growth was determined. The AtBCB, parB, and NtGDI1 lines had
their root elongation irreversibly inhibited by the 100 µM Al treatment, as did Ler (data not shown). In contrast, the NtPox line showed a small recovery of root
elongation after a 4- to 5-d time lag (Fig.
6).

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Figure 6.
Recovery of root growth after Al treatment. Young
(4-d-old) seedlings of the NtPox line (circles) and the Ler
control line (squares) were treated with 100 µM
Al (black symbols) or without Al (white symbols) for 24 h and then
cultured under an Al-free condition. Root elongation was determined
every 24 h and is shown here as the sum of means of root growth
per 24 h (n = 10). Error bars are also calculated
from 10 tested plants.
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Together, these results suggest that the NtPox line may
differ from the other transgenic lines in its capacity to avoid some of
the DNA damage caused by Al toxicity.
Construction of New Al-Resistant Transgenic Plants
The levels of Al resistance conferred by these four transgenic
plants were small, and differences in resistance were only observed
over a narrow range of concentrations (Ezaki et al., 2000 ). If each
gene operates by a different mechanism for Al resistance, it is
expected that F1 plants carrying pairs of genes
should show a higher Al-resistant phenotype than parental plants
carrying a single resistant gene. To investigate this possibility, all six pairs of hybrids between the resistant lines were constructed: AtBCB × parB, AtBCB × NtPox, AtBCB × NtGDI1,
parB × NtPox, parB × NtGDI1, and NtPox × NtGDI1. The
hybrid crosses were independently performed three to four times, and
the constructed F1 lines were tested for their Al
sensitivity using Ler and the AtBCB line as controls.
Figure 7 shows the results of root
elongation tests in the presence of Al. The results show that most of
the F1 plants are more resistant to 200 µM Al than the AtBCB line. In particular, all
three F1 lines containing the AtBCB
gene showed a higher resistance to 200 µM Al
than the parental AtBCB line. At 300 µM Al, the three F1 lines
containing the NtPox transgene (AtBCB × NtPox, parB × NtPox, and
NtPox × NtGDI) and the parB × NtGDI1 line all showed clearly higher tolerance than the
single transgene lines. Comparison of these results with those
obtained previously for the single lines with NtPox,
NtGDI1, and parB transgenes (Ezaki et al., 2000 ) confirms that there is an increased level of tolerance for each of the
corresponding double transgenic lines for these transgenes.

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Figure 7.
Sensitivity tests of the constructed transgenic
F1 lines for Al stress. Plants were tested for
their sensitivity to 0, 200, or 300 µM Al toxicity
according to a vertical mesh transfer technique described previously
(Ezaki et al., 2000 ). Error bars represent SE values
(n = 20 for all except for one cross of
AtBCB × NtGDI1 shown by the asterisk,
n = 8). Three or four independent crossbreeds were
performed for each cross, and F1 seeds were used
for Al sensitivity tests (crosses #1 and #2 were tested at 200 µM, and crosses #3 and #4 were tested at both
200 and 300 µM). We show here all results of Al
sensitivity tests. Dots show untested crosses. The lines carrying the
parB, NtPox, or NtGDI1 genes were not
tested in this experiment as control lines carrying a single resistant
gene because our previous sensitivity tests have already shown them to
have similar Al sensitivity to the line expressing the AtBCB
gene (Ezaki et al., 2000 ).
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DISCUSSION |
Because different assays measure different parameters of Al
toxicity, multiple estimations by different methods are necessary to
judge Al sensitivity. In this study, we investigated the Al-resistant mechanisms of four transgenic lines carrying the AtBCB,
parB, NtPox, or NtGDI1 genes, and
differences in the mechanism of tolerance conferred by each of the
genes could be revealed using a series of different assays. From this
point of view, we suggest that the NtPox is the most
attractive gene to confer Al resistance to plants because it rated
higher than the control Ler line in most of the assays used to date.
The NtPox line showed higher relative root growth in Al
(Ezaki et al., 2000 ), lower morin staining (Ezaki et al., 2000 ), lower
H2DCFDA staining (Ezaki et al., 2000 ), lower
deposition of callose in the root tip region, lower deposition of lipid
peroxides, lower disintegration of nuclei, and better recovery after Al toxicity.
We determined the Al content in the root tip regions (2- or 5-mm
region) of the Al-resistant lines and the control line in Al influx
experiments and found that the differences of Al content between them
were small. Although our morin staining experiment of the Al-treated
roots showed a much clearer difference between the two groups,
suggesting that the four transgenic plants accumulate lower Al than Ler
in the root tip region, this difference was seen most clearly within
the 0.5-mm region of the tips, including the cell division and cell
elongation zones (Ezaki et al., 2000 ). One simple explanation of the
difference between the results is that Al ions are absorbed into the
whole root region in Arabidopsis, but the biological effects of Al ions
in each part of the root may be different. We have determined the Al
content in the whole root region by using an atomic absorption
spectrophotometer and found that the Al content in whole roots is
almost the same among the sensitive and resistant Arabidopsis plants
(data not shown). We speculate that the content of Al ions in the root
tip region (0-0.5-mm region) is the most important and critical factor
for Al sensitivity in Arabidopsis. Diminishing Al content in this region, rather than in whole root, is much more important for Al
resistance. Similar results have been found in wheat.
The difference in Al content during the uptake and recovery periods
among the tested lines (the AtBCB, NtGDI1, and
Ler) was small but reproducible. We have not yet clarified the precise function of these genes in Al stress, but these results suggest that
overexpression of AtBCB may suppress Al uptake and that
overexpression of NtGDI1 can promote a decrease of Al
content in the root tip region. Because similar increases in influx or
efflux could be observed in the yeast transformant carrying either of
these two genes (Ezaki et al., 1999 ), we propose that each of these
genes has a similar function in control of Al content in both plant and yeast.
There is more than 80% similarity in the total amino acid sequence
between the AtGDI (Arabidopsis GDI gene) and
NtGDI1 genes, and the AtGDI gene can complement
the sec19 mutation of yeast, which is related to the vesicle
transport system (Ueda et al., 1996 ). Therefore, there is a possibility
that overexpression of our NtGDI1 gene is also directly or
indirectly related to stimulation of a vesicle transport system in
plant cells. One simple possibility is that NtGDI1 protein functions
for a transportation or localization of cell membrane protein(s) that
are involved in an efflux system for Al ions. Complementation of the
sec19 mutation of yeast by an overexpression of the
NtGDI1 gene may be one of the ways to confirm this
possibility. Otherwise, we should measure Al content of the medium over
the same time frame. Another possibility is that Figure 3B may not
represent Al efflux, but actually dilution of Al concentration
attributable to differences in growth of root tip region (especially in
the 0-0.5-mm region) under Al conditions. In this case, overexpression
of the NtGDI1 gene in Arabidopsis and/or yeast may cause for
a decrease of Al content by a promotion of cell division and/or cell elongation.
An explanation of the Al resistance mechanism in AtBCB lines
is more difficult. Van Gysel et al. (1993) reported that the AtBCB gene encodes a negatively light-regulated,
cupredoxin-like protein and proposed that it is involved in electron
transfer reactions in the cell membrane region. The AtBCB
gene shows 86% amino acid identity with horseradish (Armoracia
rusticana) umecyanin, whose function has not yet been
clarified. However, because horseradish umecyanin was isolated from
roots bound to peroxidase, Van Driesche et al. (1995) suggested the
possibility that the horseradish umecyanin and peroxidase function
together in the root cell membrane region. The very high similarity in
amino acid sequence between AtBCB and umecyanin suggests a
possibility that the AtBCB protein also has a similar function in
Arabidopsis roots. Drew and Gatehouse (1994) further reported that the
pea (Pisum sativum) blue copper-binding protein is
correlated with lignin deposition in pod endocarp. The last enzymatic
step in lignin biosynthesis involves oxidative polymerization of free
radicals catalyzed by cell wall peroxidase in plants. Therefore,
another possibility is that the AtBCB protein and umecyanin may be
related to lignin metabolism in the cell membrane region. We speculate
that the AtBCB gene can function in the protection of cell
walls or cell membranes from Al toxicity via electron transfer
reactions and that Al uptake can be restricted in the AtBCB
line. To confirm this hypothesis, we determined the content of phenolic
compounds and lignin in both of the Al-treated and untreated root tips
of the AtBCB line and Ler (0-5-mm region). Their contents
were slightly decreased by Al treatment, but there was no significant
difference under the Al-treated and untreated conditions between the
two lines (data not shown). These results indicated that it is unlikely
that the AtBCB protein effects quantitative change in lignin
metabolism, but it still cannot be excluded that the AtBCB protein
causes a qualitative change. Further work is necessary to characterize
the function of the AtBCB gene in Al stress.
Compared with Ler, the transgenic plants overexpressing the
NtPox or parB genes showed higher activity of
each enzyme without Al, and they can maintain a higher level of enzyme
activity during Al treatment in their root regions. We also found that
the transgenic lines carrying these genes accumulate lower levels of
lipid peroxides in root region than Ler by Al stress. We propose that
the high enzyme activities in transgenic plants probably diminish lipid peroxidation caused by Al stress. These results are consistent with our previous results of H2DCFDA staining
after Al treatment indicating that oxidative damage caused by Al
treatment was diminished especially in the NtPox line (Ezaki
et al., 2000 ). We therefore propose that they act to restrict lipid
peroxidation in cell membrane regions and help to maintain membrane
function. We also suppose that cell membranes of these lines,
especially the NtPox line, probably can restrict the influx
of Al ions into the cytosol to a low level and maintain (or recover)
root cell viability and/or root growth. We have not yet characterized
precisely whether the oxidative damage is a cause or a result of Al
stress, but these results suggest that overexpression of antioxidation
enzymes is an effective way to prevent Al toxicity in Arabidopsis. In
our determination of lipid peroxides in root regions, the
NtGDI1 line also showed a low increase of MDA by Al
treatment. Because it is unlikely that an overexpression of the
NtGDI1 genes can directly repress lipid peroxidation in the
cell membrane region, we suppose that the lower induction was derived
from a secondary effect of the overexpression.
It has been reported that fragmentation of DNA occurs after exposure to
Al, and a programmed cell death has been proposed in Al toxicity
(Yamaguchi et al., 1999 ). In our study, we observed a conformational
change of nuclei and small DAPI-specific particles in the Al-treated
roots of the control line, consistent with the idea that apoptosis-like
cell death via DNA fragmentation is occurring during Al stress. Similar
damage can be induced in barley (Hordeum vulgare)
roots by sodium stress (Katsuhara and Kawasaki, 1996 ; Katsuhara, 1997 ).
Compared with Ler, there was a lower damage in nuclei of the
NtPox line under 100 µM Al
treatment. Furthermore, our root elongation assay after 100 µM Al treatment indicated that the
NtPox line can gradually recover its root cell viability after a 4- to 5-d time lag. These results suggested that the
Al-resistant phenotype of the NtPox line may be essentially
different from those of the other three lines and that the threshold
for Al toxicity is higher in the NtPox line than in the
other three. The reduced disintegration of nuclei and the ability of
this line to survive Al treatment suggest that apoptosis-like cell
death may specifically be reduced in this transgenic line as its unique
resistant mechanism.
In this study, we constructed transgenic plants with pairs of Al
resistance genes, which had higher resistance than the individual genes
alone. These results suggested that the genes have additive effects on
Al tolerance. Secretion of organic acids is a useful resistant
mechanism for several important crops, such as wheat, maize
(Zea mays), snapbean (Phaseolus
vulgaris), taro (Colocasia esculenta), and so
on. However, it is clear that alternative mechanisms for Al tolerance
are possible (Wenzl et al., 2001 ). We believe that
characterization of Al-induced genes and how they affect the level of
tolerance to Al toxicity will be a profitable source of new mechanisms
for Al resistance in plants.
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MATERIALS AND METHODS |
Plant Material and Growth Conditions
All transgenic Arabidopsis lines [AtBCB(5-1), parB(3-1),
NtPox(6-2), NtGDI1(5-11), wali5(8-11), AtPox(4-1), and parA(10-1)] and
the control line (Ler) used in this study were described previously (Ezaki et al., 2000 ). Plants were grown under fluorescent illumination (approximately 50 µE m 2 s 1, 16 h of
light, and 8 h of darkness) at 22°C. A modified Murashige and
Skoog medium (Murashige and Skoog, 1962 ), one-sixth Murashige and
Skoog, in which Suc was 10 g L 1 but Murashige and
Skoog salts and B5 vitamins were 6 times diluted, was used for plant
growth and for Al treatment. The pH of the medium was adjusted to 4.0 for all Al treatments.
Al Treatments
All Al treatments in this study except for the Al sensitivity
test (Fig. 7) were performed under sterile hydroponic conditions using
plant growth racks. Sterilized seeds were incubated at 4°C for 4 d and then plated on a nylon mesh square cup (mesh size, 300 µm; cup
size, 4-cm width × 4-cm length × 1-cm height). This square
cup was kept floating with a sponge supporter on 130 mL of one-sixth
Murashige and Skoog medium without Al in a plant growth rack to support
plant growth. Young seedlings grown for 6 to 7 d (with
15-25-mm-length roots) were used for the various Al treatments. After
Al treatments, plants were washed several times with an excess of
distilled water, and then root tips or whole roots were used for analyses.
For the Al uptake experiment and recovery experiment, young (7-d-old)
seedlings were treated with 100 µM Al for 12 h as an uptake period (uptake experiment), washed well with an excess of
distilled water, and then transferred to fresh one-sixth Murashige and
Skoog medium without Al for 12 h (recovery experiment). Sampling of 20 root tips (2-mm length) was performed every 3 h in each experiment, and the collected roots were stored at 80°C until analyzed.
Microscopic Observations
Callose production in Al-treated roots was visualized by
staining with aniline blue as described by Larsen et al. (1996) . The
root region of 7-d-old seedlings was exposed to one-sixth Murashige and
Skoog medium containing 100 µM Al for 5 h, fixed with formaldehyde under vacuum condition, and then stained with 0.1% (w/v) aniline blue. A fluorescent microscope, MPM800 (Carl Zeiss, Oberkochen, Germany), was used for observation.
Detection of Al Content in Root Region
Root tips of Al-treated roots (2- or 5-mm length) were excised
and disrupted by treatment with acid
(HNO3/H2SO4, 1:1, v/v) at 100°C
for 5 h. Al content was determined by a polarized Zeeman atomic
absorption spectrophotometer (Z-8270; Hitachi, Tokyo).
Total Peroxidase and GST Activities
Whole roots of Al-treated plants (100 µM Al
treatment for 6 h) were frozen in liquid nitrogen, ground with
pestle and mortar, and then suspended in 10 mM
phosphate-buffered saline (pH 6.0). The ratio of buffer volume
to sample volume was almost 1:1 (v/v). The homogenate was centrifuged
at 15,000g at 4°C for 20 min, and the supernatant was
used for enzyme analyses as a soluble fraction. Total protein content
of each sample was determined by the Bradford reagent assay (Bradford,
1976 ). Enzyme activities of total peroxidase and GST were determined by
the methods described by Wakiuchi et al. (1971) and Edwards and Owen
(1986) , respectively.
Detection of Lipid Peroxidation
Lipid peroxides were determined as MDA by the thiobarbituric
method described previously (Ono et al., 1995 ).
Determination of DNA Degradation
Cell death caused by Al treatments was monitored by DAPI
staining (Katsuhara, 1997 ). After replacement of water with ethanol, fixed roots were embedded in Technovit 7100 (Heraeus Kulzer,
Wehrheim, Germany), cut to 15-µm-thick sections, and stained with
DAPI. Conformational changes of the nuclei were observed under UV fluorescence.
Root Elongation Assay
To investigate recovery from Al toxicity (Fig. 6), Al-treated
plants were tested in a root elongation assay. Young plants were grown
in one-sixth Murashige and Skoog medium for 4 d in a nylon square
mesh cup. The medium was changed to a fresh one-sixth Murashige and
Skoog medium containing 0 µM (control) or 100 µM Al (Al treatment), and the seedlings were treated for
24 h. After the treatments, 10 plants were transferred to a
3-mm-thick plastic plate with a square of nylon mesh (30-µm mesh) and
three squares of 1-mm-thick chromatography paper (3MM CHR, Whatman,
Maidstone, UK) on it in this order. The nylon mesh and 3MM papers were
previously saturated well with a fresh one-sixth Murashige and Skoog
medium without Al. The transferred plants were cultured for another 7 or 12 d in a growth box. The position of each root apex was marked on the nylon mesh by a pencil every 24 h and elongation of root length of each plant was directly measured by a ruler, and a mean per
1 d for 10 plants was calculated. The root elongation shown in
Figure 6 is a sum of the means of root growth per 1 d for 10 plants.
In the case of the new constructed transgenic plants (Fig. 7), Al
sensitivity tests were performed according to the vertical mesh
transfer technique, which we used previously (Ezaki et al., 2000 ). Root
growth (the length between the root apex and bending point) of 20 plants was measured for each treatment group during the 2-d Al treatment.
 |
ACKNOWLEDGMENTS |
We thank Dr. Richard C. Gardner for his comments concerning our
manuscript and Ms. Yuka Ezaki for her technical supports in the experiments.
 |
FOOTNOTES |
Received April 30, 2001; returned for revision July 3, 2001; accepted August 13, 2001.
1
This work was supported by the Program for
Promotion of Basic Research Activities for Innovative Biosciences (to
H.M.) and by the Ministry of Education, Culture, Sports, Science and
Technology, the Ohara Foundation for Agricultural Sciences
[Grant-in-Aid for Scientific Research (A)(2) no. 11306006 to H.M. and
Grant-in-Aid for Scientific Research (C)(2) no. 13660066 to B.E.].
*
Corresponding author; e-mail bezaki{at}rib.okayama-u.ac.jp; fax
086-434-1249.
Article, publication date, and citation information can be found at
www.plantphysiol.org/cgi/doi/10.1104/pp.010399.
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